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HL67231DG LASER DIODE

HL67231DG Laser Diode Specification Summary
Part Number HL67231DG
Wavelength 671 nm
Laser Power 210 mW
Package 5.6 mm
Maximum Operating Temperature -10 to 75 deg.
Pin Configuration P
Polarization Ratio 100:1
Description Single Mode

Overview of HL67231DG Laser Diode

HL67231DG is a high-performance red laser diode developed by Ushio, featuring a wavelength of 671 nm and an optical output power of 210 mW. It is equipped with an anti-reflection (AR) coated front facet, achieving a target reflectivity of 0.1% at 671 nm, which enhances its efficiency and stability. Designed for demanding applications, it operates effectively at temperatures up to +75°C.​

Key Features:

  • Wavelength: 671 nm
  • Optical Output Power: 210 mW
  • Threshold Current: 60 mA
  • Operating Current: 240 mA at 200 mW
  • Operating Voltage: 2.7 V at 200 mW
  • Beam Divergence: Parallel to junction: 8° (FWHM); Perpendicular to junction: 15° (FWHM)
  • Operating Temperature: -10°C to +75°C
  • Storage Temperature: -40°C to +85°C
  • Package Type: Flanged
  • Polarization: Transverse electric (TE) mode oscillation​
  • Applications:

  • External Cavity Diode Lasers (ECDLs): Used in tunable laser source instruments
  • Optical Equipment: Serves as a stable light source in various optical devices
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